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• W2626900885 abstract "We report the study of anatase TiO2(001)-oriented thin films grown by pulsed laser deposition on LaAlO3(001). A combination of in situ and ex situ methods has been used to address both the origin of the Ti3+-localized states and their relationship with the structural and electronic properties on the surface and the subsurface. Localized in-gap states are analyzed using resonant X-ray photoelectron spectroscopy and are related to the Ti3+ electronic configuration, homogeneously distributed over the entire film thickness. We find that an increase in the oxygen pressure corresponds to an increase in Ti3+ only in a well-defined range of deposition pressure; outside this range, Ti3+ and the strength of the in-gap states are reduced." @default.
• W2626900885 created "2017-06-23" @default.
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• W2626900885 date "2017-06-26" @default.
• W2626900885 modified "2023-10-05" @default.
• W2626900885 title "Role of Oxygen Deposition Pressure in the Formation of Ti Defect States in TiO₂(001) Anatase Thin Films" @default.
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• W2626900885 doi "https://doi.org/10.1021/acsami.7b03181" @default.
• W2626900885 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/28613812" @default.
• W2626900885 hasPublicationYear "2017" @default.
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