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- W2639936329 abstract "CMOS fabrication processes based on clean-localized technology of Minimal fab are introduced in this work. Without a cleanroom, the particle and impurities are locally controlled at each machine and wafer carrier during the fabrication process. Two methods of CMOS inverter fabrication are performed, 1) using only equipment of a minimal fab for entire process on Si bulk wafer and 2) hybridizing the minimal fab with a conventional fab on SOI wafer. Both methods employ thermal diffusion for doping impurities. We have confirmed that both CMOS have good electrical-properties including interface state density." @default.
- W2639936329 created "2017-06-30" @default.
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- W2639936329 date "2017-02-01" @default.
- W2639936329 modified "2023-10-17" @default.
- W2639936329 title "Process development for CMOS fabrication using minimal fab" @default.
- W2639936329 cites W1992707432 @default.
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- W2639936329 doi "https://doi.org/10.1109/edtm.2017.7947527" @default.
- W2639936329 hasPublicationYear "2017" @default.
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