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• W2655608296 abstract "Ultra thin MgO films (1-2 nm) are grown on Si/SiO 2 substrates using molecular beam epitaxy (MBE). Different growth conditions such as substrate temperatures, annealing conditions and growth rates are tested in order to achieve optimum parameters for the smooth and uniform growth. The films were characterized ex-situ using atomic force microscopy and x ray diffractio. Our results demonstrate MBE growth of MgO films with an rms roughness better than 0.5 nm on Si/SiO 2 substrates. These results are important for the applications of MgO films as tunnel barriers in spintronic devices." @default.
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• W2655608296 date "2017-06-21" @default.
• W2655608296 modified "2023-09-26" @default.
• W2655608296 title "Growth of Magnesium Oxide Thin Films Using Molecular Beam Epitaxy" @default.
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• W2655608296 doi "https://doi.org/10.6000/1927-5129.2017.13.57" @default.
• W2655608296 hasPublicationYear "2017" @default.
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