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• W2671806294 abstract "Power consumption has long been a great obstacle in phase change memory technology. Silicon carbide was introduced to be a buffer layer between the phase change material and the metal electrode in this work. The results showed that the new structure mitigated the energy consumption and maintained the advantage of high speed. This is attributed to the thin SiC buffer layer that helps confine the generated Joule heat inside the active phase change volume and form more conducting paths by the high efficiency of the heat utilization. Additionally, another key role — inhibition of the material separation, is conducive to achieving stable and sustainable electrical operations." @default.
• W2671806294 created "2017-06-30" @default.
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• W2671806294 date "2017-06-01" @default.
• W2671806294 modified "2023-09-25" @default.
• W2671806294 title "Power-Efficient Phase Change Memory Using Silicon Carbide as a Buffer Layer" @default.
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• W2671806294 doi "https://doi.org/10.4028/www.scientific.net/msf.898.1812" @default.
• W2671806294 hasPublicationYear "2017" @default.
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