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- W267347871 abstract "Abstract : The objective of this research program was to grow by molecular beam epitaxy (MBE) quantum well heterostructures of the alloy InGaAsP and related materials for use in high performance devices. The first task was to grow InGaAsP/GaAs and InGaAsP/InP structures for shallow quantum well (QW) optical modulators and other optoelectronics devices. The second task was to develop selective-area regrowth techniques for lateral definition of complex optoelectronic integrated devices. The method of growth was gas-source MBE, a technique which we have previously shown to produce high quality QW heterostructures containing alternating layers of III-V arsenide and phosphides." @default.
- W267347871 created "2016-06-24" @default.
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- W267347871 date "1996-04-30" @default.
- W267347871 modified "2023-09-27" @default.
- W267347871 title "Optoelectronic III-V Heterostructures by Gas-Source MBE." @default.
- W267347871 hasPublicationYear "1996" @default.
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