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- W267914896 abstract "Abstract : Epitaxial Si/InAs/Si heterostructure grown on (001) Si substrate by molecular beam epitaxy (MBE) and annealed at 8OO degrees C was investigated by High Resolution Transmission Electron Microscopy (HRTEM). Extensive interdiffusion leads to the formation of an InAs solid solution in the Si cap layer. Additionally, InAs-enriched regions with extensions of 6mm, which exhibit two kinds of ordering are observed. The ordering of InAs molecules has occurred. The sample show photoluminescence in the 1.3 micrometer region, which is tentatively attributed to the recombination of excitons localized in the ordered regions." @default.
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- W267914896 date "2000-06-23" @default.
- W267914896 modified "2023-09-27" @default.
- W267914896 title "Optical Properties and Structure of Si/InAs/Si Layers Grown by MBE on Si Substrate" @default.
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