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- W2693085448 endingPage "1700437" @default.
- W2693085448 startingPage "1700437" @default.
- W2693085448 abstract "Advancement in thin-film transistor (TFT) technologies has extended to applications that can withstand extreme bending or folding. The changes of the performances of amorphous-indium-gallium-zinc-oxide (a-IGZO) TFTs on polyimide substrate after application of extreme mechanical bending strain are studied. The TFT designs include mesh and strip patterned source/drain metal lines as well as strip patterned a-IGZO semiconductor layer. The robustness of the a-IGZO TFTs with the strain of 2.17% corresponding to the radius of 0.32 mm is tested and no crack generation even after 60 000 bending cycles is found. The split of source/drain electrodes and semiconductor layer can improve the mechanical bending stability of the TFTs. This can be possible by using conventional TFT manufacturing process so that this technology can be easily applied to build robust TFT array for foldable displays." @default.
- W2693085448 created "2017-06-30" @default.
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- W2693085448 date "2017-06-23" @default.
- W2693085448 modified "2023-10-16" @default.
- W2693085448 title "Highly Robust Bendable Oxide Thin-Film Transistors on Polyimide Substrates via Mesh and Strip Patterning of Device Layers" @default.
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- W2693085448 doi "https://doi.org/10.1002/adfm.201700437" @default.
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