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W269436220 abstract "Publisher Summary This chapter describes the characterization of silicon epitaxial films in very large scale integration (VLSI) technology. Characterization of silicon epitaxial films focuses on two major aspects, namely, the process and the materials. The process characterization includes the vapor-phase growth and related process technologies, including the impurity transport phenomena associated with the growth. Among process technologies, low-pressure and temperature epitaxy are being explored for high-speed VLSI circuit applications. The materials characterization techniques described are based on various types of fundamental materials properties such as electrical, physical, optical, and crystallographic. A continuous search by device designers for non-destructive characterization has resulted in the demand for several in-line characterization techniques based on these properties. Among electrical properties, particular attention is paid to the measurement of electrically active dopant concentration in the epitaxial layers. Optical properties of silicon such as photoluminescence and infrared reflectance have recently been used in conjunction with the electrical and physical characterization techniques. Fourier transform infrared spectrometry, a recently developed technique, allows the measurement of submicron epitaxial films with high speed, accuracy, and precision. Electrical activity of crystallographic defects, both intrinsic and extrinsic, is detrimental to device quality and performance. Measurement techniques for low-level metallic impurities that have emerged recently can be used as in-line characterization techniques to monitor epitaxial quality. Applications of defect-delineation techniques such as optical microscopy, X-ray topography, and scanning and transmission electron microscopy are also discussed in the chapter. Much more can be learned as epitaxial-growth processes change in the near future." @default.
W269436220 created "2016-06-24" @default.
W269436220 creator A5046134360 @default.
W269436220 date "1983-01-01" @default.
W269436220 modified "2023-09-25" @default.
W269436220 title "Characterization of Silicon Expitaxial Films" @default.
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