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- W2699406398 abstract "Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitrogen precursors. A systematic study of the growth, structural and electronic properties of these samples shows a preferential growth of the islands along [11-20] and [0001] directions leading to the formation of such a network structure, where the vertically [0001] oriented tapered walls are laterally align along one of the three [11-20] directions. Inclined facets of these walls are identified as r-planes [(1-102)-planes] of wurtzite InN. Onset of absorption for these samples is observed to be higher than the band gap of InN suggesting a high background carrier concentration in this material. Study of the valence band edge through XPS indicates the formation of positive depletion regions below the r-plane side facets of the walls. This is in contrast with the observation for c-plane InN epilayers, where electron accumulation is often reported below the top surface." @default.
- W2699406398 created "2017-06-30" @default.
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- W2699406398 date "2018-05-01" @default.
- W2699406398 modified "2023-09-23" @default.
- W2699406398 title "Network of vertically c-oriented prismatic InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique" @default.
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- W2699406398 doi "https://doi.org/10.1016/j.jcrysgro.2018.03.027" @default.
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