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- W2711160504 abstract "In the nanometer-scale CMOS technology, the gate-oxide thickness has been scaled down to support a higher operating speed under a lower power supply (1timesVDD). However, the board-level voltage levels could be still in a higher voltage levels (2timesVDD, or even more) for compatible to some earlier interface specifications in a microelectronics system. The I/O interface circuits have been designed with consideration on the gate-oxide reliability in such mixed-voltage applications. In this work, a new mixed-voltage crystal oscillator circuit realized with low-voltage CMOS devices is proposed without suffering the gate-oxide reliability issue. The proposed mixed-voltage crystal oscillator circuit, which is one of the key I/O cells in a cell library, has been designed and verified in a 90-nm I-V CMOS process to serve 1/1.8-V mixed-voltage interface applications." @default.
- W2711160504 created "2017-06-30" @default.
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- W2711160504 date "2007-05-01" @default.
- W2711160504 modified "2023-10-16" @default.
- W2711160504 title "Design of Mixed-Voltage Crystal Oscillator Circuit in Low-Voltage CMOS Technology" @default.
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- W2711160504 doi "https://doi.org/10.1109/iscas.2007.378207" @default.
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