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• W2732500993 abstract "Transmission line method (TLM) structures are often employed to extract contact resistivity between a metal and a doped semiconductor region. In this article we treat the situation where the doped region is junction-isolated from the substrate. The junction isolation may be leaky resulting in erroneous parameter extraction. The effect of junction leakage is treated both theoretically and through exemplary wafer-level CTLM measurement results on photovoltaic cells (solar cells) and epi-wafer samples. This paper describes how reliable contact resistivity values can be obtained using the transmission line method on junction isolated structures." @default.
• W2732500993 created "2017-07-14" @default.
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• W2732500993 date "2017-03-01" @default.
• W2732500993 modified "2023-09-24" @default.
• W2732500993 title "Dealing with leakage current in TLM and CTLM structures with vertical junction isolation" @default.
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• W2732500993 doi "https://doi.org/10.1109/icmts.2017.7954257" @default.
• W2732500993 hasPublicationYear "2017" @default.
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