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- W2732631383 abstract "Highly ordered hexagonal boron nitride films, and graphene/boron nitride heterostructures exhibit exciting properties for applications in advanced electronic or spintronic devices. Essential to the industrial development of these devices, however, is the ability to deposit such heterostructures by industrially scalable methods—without physical transfer. This article reviews work—mainly but not entirely since 2010—on the growth and characterization of such heterostructures by a variety of methods, including chemical vapor deposition, atomic layer deposition, and molecular beam epitaxy. The work reviewed focuses on boron nitride growth on various substrates, including graphene or graphite, and on graphene growth on boron nitride. Particular attention is paid to the growth of multilayer, highly ordered boron nitride or graphene films, as such are required for many proposed device applications. The use of analytical techniques such as X-ray photoelectron spectroscopy, low energy electron diffraction, and scanning tunneling microscopy to characterize the surface and interfacial chemical and electronic interactions of such heterostructures is also reviewed." @default.
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- W2732631383 date "2018-01-01" @default.
- W2732631383 modified "2023-09-24" @default.
- W2732631383 title "Graphene/Boron Nitride Heterostructures: Direct Growth by Scalable and Industrially Practical Methods" @default.
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- W2732631383 doi "https://doi.org/10.1016/b978-0-12-409547-2.12922-1" @default.
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