Matches in SemOpenAlex for { <https://semopenalex.org/work/W2732683622> ?p ?o ?g. }
- W2732683622 abstract "Semiconductor nanowires have aroused a lot of scientific interest and have been regarded as one of the most promising candidates that would make possible building blocks in future nanoscale devices and integrated circuits. Employing nanowire as metal‐oxide‐semiconductor field‐effect transistor (MOSFET) channel can enable a gate‐surrounding structure allowing an excellent electrostatic gate control over the channel for reducing the short‐channel effects. This chapter introduces the basic physics of semiconductor nanowires and addresses the problem of how to synthesize semiconductor nanowires with low‐cost, high‐efficiency and bottom‐up approaches. Effective integration of nanowires in modern complementary metal‐oxide‐semiconductor (CMOS) technology, specifically in MOSFET devices, and non‐volatile memory applications is also reviewed. By extending the nanowire MOSFET structure into a universal device architecture, various novel semiconductor materials can be investigated. Semiconductor nanowire MOSFETs have been proved to be a strong and useful platform to study the physical and electrical properties of the novel material. In this chapter, we will also review the investigations on topological insulator materials by employing the nanowire field‐effect transistor (FET) device structure." @default.
- W2732683622 created "2017-07-14" @default.
- W2732683622 creator A5006570442 @default.
- W2732683622 date "2017-07-05" @default.
- W2732683622 modified "2023-10-03" @default.
- W2732683622 title "Semiconductor Nanowire MOSFETs and Applications" @default.
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- W2732683622 doi "https://doi.org/10.5772/67446" @default.
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