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• W2733894345 abstract "Abstract Gapless interdigitated back contact (IBC) solar cells were fabricated with phosphorous back surface field on a boron emitter, using an ion implantation process. Boron emitter (boron ion implantation) is counter doped by the phosphorus back surface field (BSF) (phosphorus ion implantation) without gap. The gapless process step between the emitter and BSF was compared to existing IBC solar cell with gaps between emitters and BSFs obtained using diffusion processes. We optimized the doping process in the phosphorous BSF and boron emitter region, and the implied V oc and contact resistance relationship of the phosphorous and boron implantation dose in the counter doped region was analyzed. We confirmed the shunt resistance of the gapless IBC solar cells and the possibility of shunt behavior in gapless IBC solar cells. The highly doped counter doped BSF led to a controlled junction breakdown at high reverse bias voltages of around 7.5 V. After the doping region was optimized with the counter doped BSF and emitter, a large‐area (5 inch pseudo square) gapless IBC solar cell with a power conversion efficiency of 22.9% was made." @default.
• W2733894345 created "2017-07-14" @default.
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• W2733894345 date "2017-06-30" @default.
• W2733894345 modified "2023-10-18" @default.
• W2733894345 title "Gapless point back surface field for the counter doping of large-area interdigitated back contact solar cells using a blanket shadow mask implantation process" @default.
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• W2733894345 doi "https://doi.org/10.1002/pip.2910" @default.
• W2733894345 hasPublicationYear "2017" @default.
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