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- W2734349780 abstract "This work presents the performance and transport characteristics of vertically stacked p-MOSFET SOI nanowires (NWs) with inner spacers and epitaxial growth of SiGe raised source/drain. Electrical characterization is performed for NWs with [110] and [100] channel orientations, as a function of both fin width (W <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>FIN</sub> ) and channel length (L). Results show a good electrostatic control and reduced short channel effects (SCE) down to 15nm gate length. Improved effective mobility is obtained for [110]-oriented NWs due to higher sidewall mobility contribution." @default.
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- W2734349780 date "2017-04-01" @default.
- W2734349780 modified "2023-09-25" @default.
- W2734349780 title "Performance and transport analysis of vertically stacked p-FET SOI nanowires" @default.
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- W2734349780 doi "https://doi.org/10.1109/ulis.2017.7962606" @default.
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