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- W2734804988 abstract "We demonstrate the crystalline structures, optical transmittance, surface and cross-sectional morphologies, chemical compositions, and electrical properties of indium gallium zinc oxide (IGZO)-based thin films deposited on glass and silicon substrates through pulsed laser deposition (PLD) incorporated with radio-frequency (r.f.)-generated oxygen plasma. The plasma-enhanced pulsed laser deposition (PEPLD)-based IGZO thin films exhibited a c-axis-aligned crystalline (CAAC) structure, which was attributed to the increase in Zn-O under high oxygen vapor pressure (150 mTorr). High oxygen vapor pressure (150 mTorr) and low r.f. power (10 W) are the optimal deposition conditions for fabricating IGZO thin films with improved electrical properties." @default.
- W2734804988 created "2017-07-21" @default.
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- W2734804988 date "2017-07-01" @default.
- W2734804988 modified "2023-09-25" @default.
- W2734804988 title "Radio-frequency oxygen-plasma-enhanced pulsed laser deposition of IGZO films" @default.
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- W2734804988 doi "https://doi.org/10.1063/1.4994677" @default.
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