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• W2735302529 abstract "In this paper we report the experimental results of lateral 4H-SiC UV p-i-n photodiodes, whose p-type anode and n-type cathode regions are made by Aluminum and Nitrogen, respectively, ion-implantation. The dark reverse current is −31.5pA at −10V and increases at −1.24nA under 320nm UV radiation with an optical power at the surface of the device equal to 7.5nW. The peak of the responsivity is 0.074A/W at 0V and 0.169AAV at −10V for 320nm, corresponding to an external quantum efficiency of, respectively, 30% and 69%. Respect to other proposed photodiodes, our devices are fully compatible with standard 4H-SiC device process fabrication and they can be easily integrated in an electronic circuit." @default.
• W2735302529 created "2017-07-21" @default.
• W2735302529 creator A5026535044 @default.
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• W2735302529 date "2017-06-01" @default.
• W2735302529 modified "2023-09-25" @default.
• W2735302529 title "Experimental results on lateral 4H-SiC UV photodiodes" @default.
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• W2735302529 doi "https://doi.org/10.1109/iwasi.2017.7974264" @default.
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