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• W2735700863 abstract "Over decades, MOSFET gate length scaling has been the main source of progress in semiconductor electronics. Today, however, the motivation of the industry to continue gate length scaling is declining. On the other hand, researchers still spend considerable efforts on reducing the gate length and on developing ultimately scaled MOSFETs. To this end, both new device architectures and alternative channel materials are explored. In the present paper, the future of CMOS scaling in the light of emerging 2D channel materials is discussed." @default.
• W2735700863 created "2017-07-21" @default.
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• W2735700863 date "2017-04-01" @default.
• W2735700863 modified "2023-10-01" @default.
• W2735700863 title "The prospects of two-dimensional materials for ultimately scaled CMOS" @default.
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• W2735700863 doi "https://doi.org/10.1109/ulis.2017.7962615" @default.
• W2735700863 hasPublicationYear "2017" @default.
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