FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2735779530> ?p ?o ?g. }

• W2735779530 abstract "Electrostatic Discharge (ESD) is a significant hazard to electronic components and systems. Based on a specific processing technology, a given circuit application requires a customized ESD consideration that includes the devices’ operating voltage, leakage current, breakdown constraints, and footprint. As new technology nodes mature every 3-5 years, design of effective ESD protection solutions has become more and more challenging due to the narrowed design window, elevated electric field and current density, as well as new failure mechanisms that are not well understood. The endeavor of this research is to develop novel, effective and robust ESD protection solutions for both emerging technologies and modern complementary metal–oxide–semiconductor (CMOS) technologies. The Si nanowire field-effect transistors are projected by the International Technology Roadmap for Semiconductors as promising next-generation CMOS devices due to their superior DC and RF performances, as well as ease of fabrication in existing Silicon processing. Aiming at proposing ESD protection solutions for nanowire based circuits, the dimension parameters, fabrication process, and layout dependency of such devices under Human Body Mode (HBM) ESD stresses are studied experimentally in company with failure analysis revealing the failure mechanism induced by ESD. The findings, including design methodologies, failure mechanism, and technology comparisons should provide practical knowhow of the development of ESD protection schemes for the nanowire based integrated circuits. Organic thin-film transistors (OTFTs) are the basic elements for the emerging flexible, printable, large-area, and low-cost organic electronic circuits. Although there are plentiful studies focusing on the DC stress induced reliability degradation, the operation mechanism of OTFTs iv subject to ESD is not yet available in the literature and are urgently needed before the organic technology can be pushed into consumer market. In this work, the ESD operation mechanism of OTFT depending on gate biasing condition and dimension parameters are investigated by extensive characterization and thorough evaluation. The device degradation evolution and failure mechanism under ESD are also investigated by specially designed experiments. In addition to the exploration of ESD protection solutions in emerging technologies, efforts have also been placed in the design and analysis of a major ESD protection device, diodetriggered-silicon-controlled-rectifier (DTSCR), in modern CMOS technology (90nm bulk). On the one hand, a new type DTSCR having bi-directional conduction capability, optimized design window, high HBM robustness and low parasitic capacitance are developed utilizing the combination of a bi-directional silicon-controlled-rectifier and bi-directional diode strings. On the other hand, the HBM and Charged Device Mode (CDM) ESD robustness of DTSCRs using four typical layout topologies are compared and analyzed in terms of trigger voltage, holding voltage, failure current density, turn-on…" @default.
• W2735779530 created "2017-07-21" @default.
• W2735779530 creator A5051698365 @default.
• W2735779530 date "2012-01-01" @default.
• W2735779530 modified "2023-09-23" @default.
• W2735779530 title "Design, Characterization And Analysis Of Electrostatic Discharge (esd) Protection Solutions In Emerging And Modern Technologies" @default.
• W2735779530 cites W1486662251 @default.
• W2735779530 cites W1492802485 @default.
• W2735779530 cites W1529309913 @default.
• W2735779530 cites W1536351615 @default.
• W2735779530 cites W1966291942 @default.
• W2735779530 cites W1973547321 @default.
• W2735779530 cites W1975495623 @default.
• W2735779530 cites W1977103279 @default.
• W2735779530 cites W1978362728 @default.
• W2735779530 cites W2001190115 @default.
• W2735779530 cites W2001465504 @default.
• W2735779530 cites W2004811892 @default.
• W2735779530 cites W2006564884 @default.
• W2735779530 cites W2015115152 @default.
• W2735779530 cites W2027518897 @default.
• W2735779530 cites W2031409622 @default.
• W2735779530 cites W2038694080 @default.
• W2735779530 cites W2087866315 @default.
• W2735779530 cites W2088896621 @default.
• W2735779530 cites W2095116621 @default.
• W2735779530 cites W2115321493 @default.
• W2735779530 cites W2124240566 @default.
• W2735779530 cites W2124657688 @default.
• W2735779530 cites W2126600777 @default.
• W2735779530 cites W2132118564 @default.
• W2735779530 cites W2133099498 @default.
• W2735779530 cites W2141008036 @default.
• W2735779530 cites W2146498068 @default.
• W2735779530 cites W2148184268 @default.
• W2735779530 cites W2152297112 @default.
• W2735779530 cites W2159328621 @default.
• W2735779530 cites W2161820776 @default.
• W2735779530 cites W2165011969 @default.
• W2735779530 cites W2166530197 @default.
• W2735779530 cites W2174874757 @default.
• W2735779530 cites W2412194863 @default.
• W2735779530 cites W2546260020 @default.
• W2735779530 cites W3140153387 @default.
• W2735779530 cites W3143899571 @default.
• W2735779530 cites W3148261282 @default.
• W2735779530 cites W593842749 @default.
• W2735779530 cites W618388913 @default.
• W2735779530 hasPublicationYear "2012" @default.
• W2735779530 type Work @default.
• W2735779530 sameAs 2735779530 @default.
• W2735779530 citedByCount "0" @default.
• W2735779530 crossrefType "journal-article" @default.
• W2735779530 hasAuthorship W2735779530A5051698365 @default.
• W2735779530 hasConcept C119599485 @default.
• W2735779530 hasConcept C121332964 @default.
• W2735779530 hasConcept C127413603 @default.
• W2735779530 hasConcept C134146338 @default.
• W2735779530 hasConcept C163258240 @default.
• W2735779530 hasConcept C165801399 @default.
• W2735779530 hasConcept C172385210 @default.
• W2735779530 hasConcept C200601418 @default.
• W2735779530 hasConcept C205483674 @default.
• W2735779530 hasConcept C24326235 @default.
• W2735779530 hasConcept C41008148 @default.
• W2735779530 hasConcept C43214815 @default.
• W2735779530 hasConcept C46362747 @default.
• W2735779530 hasConcept C530198007 @default.
• W2735779530 hasConcept C62520636 @default.
• W2735779530 hasConcept C66283442 @default.
• W2735779530 hasConceptScore W2735779530C119599485 @default.
• W2735779530 hasConceptScore W2735779530C121332964 @default.
• W2735779530 hasConceptScore W2735779530C127413603 @default.
• W2735779530 hasConceptScore W2735779530C134146338 @default.
• W2735779530 hasConceptScore W2735779530C163258240 @default.
• W2735779530 hasConceptScore W2735779530C165801399 @default.
• W2735779530 hasConceptScore W2735779530C172385210 @default.
• W2735779530 hasConceptScore W2735779530C200601418 @default.
• W2735779530 hasConceptScore W2735779530C205483674 @default.
• W2735779530 hasConceptScore W2735779530C24326235 @default.
• W2735779530 hasConceptScore W2735779530C41008148 @default.
• W2735779530 hasConceptScore W2735779530C43214815 @default.
• W2735779530 hasConceptScore W2735779530C46362747 @default.
• W2735779530 hasConceptScore W2735779530C530198007 @default.
• W2735779530 hasConceptScore W2735779530C62520636 @default.
• W2735779530 hasConceptScore W2735779530C66283442 @default.
• W2735779530 hasLocation W27357795301 @default.
• W2735779530 hasOpenAccess W2735779530 @default.
• W2735779530 hasPrimaryLocation W27357795301 @default.
• W2735779530 hasRelatedWork W1481708426 @default.
• W2735779530 hasRelatedWork W1540067048 @default.
• W2735779530 hasRelatedWork W1992085395 @default.
• W2735779530 hasRelatedWork W2094074146 @default.
• W2735779530 hasRelatedWork W2100582672 @default.
• W2735779530 hasRelatedWork W2104116051 @default.
• W2735779530 hasRelatedWork W2132952466 @default.
• W2735779530 hasRelatedWork W2148184268 @default.
• W2735779530 hasRelatedWork W2149624722 @default.
• W2735779530 hasRelatedWork W2158426875 @default.
• W2735779530 hasRelatedWork W2235758889 @default.

• next