Matches in SemOpenAlex for { <https://semopenalex.org/work/W2737140855> ?p ?o ?g. }
Showing items 1 to 86 of
86
with 100 items per page.
- W2737140855 abstract "AlGaN:Si epilayers with uniform Al compositions of 60%, 70%, 80%, and 90% were grown by metal-organic vapor phase epitaxy along with a compositionally graded, unintentionally doped (UID) AlGaN epilayer with the Al composition varying linearly between 80% and 100%. The resistivity of AlGaN:Si with a uniform composition increased significantly for the Al content of 80% and greater, whereas the graded UID-AlGaN film exhibited resistivity equivalent to 60% and 70% AlGaN:Si owing to polarization-induced doping. Deep level defect studies of both types of AlGaN epilayers were performed to determine why the electronic properties of uniform-composition AlGaN:Si degraded with increased Al content, while the electronic properties of graded UID-AlGaN did not. The deep level density of uniform-composition AlGaN:Si increased monotonically and significantly with the Al mole fraction. Conversely, graded-UID AlGaN had the lowest deep level density of all the epilayers despite containing the highest Al composition. These findings indicate that Si doping is an impetus for point defect incorporation in AlGaN that becomes stronger with the increasing Al content. However, the increase in deep level density with the Al content in uniform-composition AlGaN:Si was small compared to the increase in resistivity. This implies that the primary cause for increasing resistivity in AlGaN:Si with the increasing Al mole fraction is not compensation by deep levels but rather increasing activation energy for the Si dopant. The graded UID-AlGaN films maintained low resistivity because they do not rely on thermal ionization of Si dopants." @default.
- W2737140855 created "2017-07-31" @default.
- W2737140855 creator A5040265668 @default.
- W2737140855 creator A5049221263 @default.
- W2737140855 date "2017-07-24" @default.
- W2737140855 modified "2023-10-06" @default.
- W2737140855 title "Evolution of AlGaN deep level defects as a function of alloying and compositional grading and resultant impact on electrical conductivity" @default.
- W2737140855 cites W1532644571 @default.
- W2737140855 cites W1971958003 @default.
- W2737140855 cites W1982899118 @default.
- W2737140855 cites W1986774761 @default.
- W2737140855 cites W1988247990 @default.
- W2737140855 cites W2011113940 @default.
- W2737140855 cites W2014384153 @default.
- W2737140855 cites W2015930517 @default.
- W2737140855 cites W2018685415 @default.
- W2737140855 cites W2021912610 @default.
- W2737140855 cites W2026056049 @default.
- W2737140855 cites W2032284887 @default.
- W2737140855 cites W2047458664 @default.
- W2737140855 cites W2053672436 @default.
- W2737140855 cites W2054060080 @default.
- W2737140855 cites W2056579535 @default.
- W2737140855 cites W2059890867 @default.
- W2737140855 cites W2067688095 @default.
- W2737140855 cites W2071801313 @default.
- W2737140855 cites W2076929903 @default.
- W2737140855 cites W2078614759 @default.
- W2737140855 cites W2098280679 @default.
- W2737140855 cites W2119418964 @default.
- W2737140855 cites W2161444511 @default.
- W2737140855 cites W2313120376 @default.
- W2737140855 cites W2413124439 @default.
- W2737140855 cites W2482201287 @default.
- W2737140855 cites W2558247794 @default.
- W2737140855 cites W3098811512 @default.
- W2737140855 doi "https://doi.org/10.1063/1.4996237" @default.
- W2737140855 hasPublicationYear "2017" @default.
- W2737140855 type Work @default.
- W2737140855 sameAs 2737140855 @default.
- W2737140855 citedByCount "7" @default.
- W2737140855 countsByYear W27371408552018 @default.
- W2737140855 countsByYear W27371408552020 @default.
- W2737140855 countsByYear W27371408552021 @default.
- W2737140855 countsByYear W27371408552022 @default.
- W2737140855 countsByYear W27371408552023 @default.
- W2737140855 crossrefType "journal-article" @default.
- W2737140855 hasAuthorship W2737140855A5040265668 @default.
- W2737140855 hasAuthorship W2737140855A5049221263 @default.
- W2737140855 hasBestOaLocation W27371408551 @default.
- W2737140855 hasConcept C119599485 @default.
- W2737140855 hasConcept C127413603 @default.
- W2737140855 hasConcept C191952053 @default.
- W2737140855 hasConcept C192562407 @default.
- W2737140855 hasConcept C49040817 @default.
- W2737140855 hasConcept C57863236 @default.
- W2737140855 hasConcept C69990965 @default.
- W2737140855 hasConceptScore W2737140855C119599485 @default.
- W2737140855 hasConceptScore W2737140855C127413603 @default.
- W2737140855 hasConceptScore W2737140855C191952053 @default.
- W2737140855 hasConceptScore W2737140855C192562407 @default.
- W2737140855 hasConceptScore W2737140855C49040817 @default.
- W2737140855 hasConceptScore W2737140855C57863236 @default.
- W2737140855 hasConceptScore W2737140855C69990965 @default.
- W2737140855 hasFunder F4320338291 @default.
- W2737140855 hasIssue "4" @default.
- W2737140855 hasLocation W27371408551 @default.
- W2737140855 hasLocation W27371408552 @default.
- W2737140855 hasLocation W27371408553 @default.
- W2737140855 hasOpenAccess W2737140855 @default.
- W2737140855 hasPrimaryLocation W27371408551 @default.
- W2737140855 hasRelatedWork W110584757 @default.
- W2737140855 hasRelatedWork W1982653982 @default.
- W2737140855 hasRelatedWork W2006986759 @default.
- W2737140855 hasRelatedWork W2072456327 @default.
- W2737140855 hasRelatedWork W2134557349 @default.
- W2737140855 hasRelatedWork W2227030050 @default.
- W2737140855 hasRelatedWork W2760942457 @default.
- W2737140855 hasRelatedWork W2808940911 @default.
- W2737140855 hasRelatedWork W3173404886 @default.
- W2737140855 hasRelatedWork W4245763285 @default.
- W2737140855 hasVolume "111" @default.
- W2737140855 isParatext "false" @default.
- W2737140855 isRetracted "false" @default.
- W2737140855 magId "2737140855" @default.
- W2737140855 workType "article" @default.