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Matches in SemOpenAlex for { <https://semopenalex.org/work/W2737588942> ?p ?o ?g. }

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• W2737588942 abstract "Implantation-free mesa-etched ultra-high-voltage (0.08 mm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ) 4H-SiC bipolar junction transistors (BJTs) with record current gain of 139 are fabricated, measured, and analyzed by device simulation. High current gain is achieved by optimized surface passivation and optimal cell geometries. The area-optimized junction termination extension is utilized to obtain a high and stable breakdown voltage without ion implantation. The open-base blocking voltage of 15.8 kV at a leakage current density of 0.1 mA/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> is achieved. Different cell geometries (single finger, square, and hexagon cell geometries) are also compared." @default.
• W2737588942 created "2017-07-31" @default.
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• W2737588942 date "2018-01-01" @default.
• W2737588942 modified "2023-10-09" @default.
• W2737588942 title "15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain" @default.
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• W2737588942 doi "https://doi.org/10.1109/led.2017.2774139" @default.
• W2737588942 hasPublicationYear "2018" @default.
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