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- W2737971931 abstract "Modulation-doped III–V semiconductor nanowire (NW) heterostructures have recently emerged as promising candidates to host high-mobility electron channels for future high-frequency, low-energy transistor technologies. The one-dimensional geometry of NWs also makes them attractive for studying quantum confinement effects. Here, we report correlated investigations into the discrete electronic sub-band structure of confined electrons in the channel of Si δ-doped GaAs−GaAs/AlAs core−superlattice NW heterostructures and the associated signatures in low-temperature transport. On the basis of accurate structural and dopant analysis using scanning transmission electron microscopy and atom probe tomography, we calculated the sub-band structure of electrons confined in the NW core and employ a labeling system inspired by atomic orbital notation. Electron transport measurements on top-gated NW transistors at cryogenic temperatures revealed signatures consistent with the depopulation of the quasi-one-dimensional sub-bands, as well as confinement in zero-dimensional-like states due to an impurity-defined background disorder potential. These findings are instructive toward reaching the ballistic transport regime in GaAs−AlGaAs based NW systems." @default.
- W2737971931 created "2017-07-31" @default.
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- W2737971931 date "2017-07-26" @default.
- W2737971931 modified "2023-09-26" @default.
- W2737971931 title "Quantum Transport and Sub-Band Structure of Modulation-Doped GaAs/AlAs Core–Superlattice Nanowires" @default.
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- W2737971931 doi "https://doi.org/10.1021/acs.nanolett.7b01732" @default.
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