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- W2738014717 abstract "The noise mechanisms in graphene and MoS 2 are quite different. The noise characteristics of MoS 2 transistors could be described by the McWhorter model. The range of the trap densities responsible for the 1/f noise in MoS 2 extracted from the noise measurements is from ∼1018 eV−1cm−3 to ∼ 6×1020 eV−1cm−3. The smallest noise level and smallest trap density was found for multilayer MoS 2 transistors with the number of layer N>6. The noise level in graphene, in general, is much smaller than in MoS 2 transistors and does not comply with the McWhorter model. The low frequency noise in high quality graphene transistors might be relatively low and comparable to Si MOSFETs. The contacts have an important effect on the noise in graphene, but the dominant sources of noise in not aged devices is the channel. The gate voltage dependencies of noise in graphene indicate that the mobility fluctuations give the dominant contribution to noise. The noise measurements of electron irradiated graphene devices and measurements in magnetic field confirm this hypothesis. Both in MoS 2 and graphene, the noise decreases with the number, N, of the atomic layers. The 1/f noise in relatively thin graphene devices with N<7 is the surface phenomenon. In the thicker graphene devices the volume mechanisms of noise start to dominate. Gas environment changes the shape of the noise spectra in graphene. Therefore, the low frequency noise measurements, in combination with other sensing parameters, can be used for the selective gas sensing." @default.
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- W2738014717 date "2017-06-01" @default.
- W2738014717 modified "2023-09-27" @default.
- W2738014717 title "Low frequency noise in 2D materials: Graphene and MoS<inf>2</inf>" @default.
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- W2738014717 doi "https://doi.org/10.1109/icnf.2017.7985949" @default.
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