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• W2738074799 endingPage "08MC09" @default.
• W2738074799 startingPage "08MC09" @default.
• W2738074799 abstract "Ag(In,Ga)Se2 (AIGS) is one of the promising candidates for the top cell absorber in the tandem structure. However, the conversion efficiency of AIGS solar cells is still lower than that required for the top cell. In this study, to improve the conversion efficiency of AIGS solar cells, we controlled the conduction band offset (CBO) at the buffer layer/ZnO and buffer layer/AIGS interfaces. The reduction in interface recombination at the CdS buffer layer/AIGS interface was achieved by introducing a ZnS(O,OH) buffer layer instead of a CdS buffer layer, although the fill factor (FF) decreased markedly because the CBO at the ZnS(O,OH)/ZnO interface prevented the electron flow under a forward bias. We found that the introduction of a CdS/ZnS(O,OH) hybrid buffer layer is efficient in controlling the CBO at both the buffer layer/AIGS and buffer layer/ZnO interfaces and improving the solar cell conversion efficiency." @default.
• W2738074799 created "2017-07-31" @default.
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• W2738074799 date "2017-07-18" @default.
• W2738074799 modified "2023-10-10" @default.
• W2738074799 title "Conduction band offset engineering in wide-bandgap Ag(In,Ga)Se₂solar cells by hybrid buffer layer" @default.
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• W2738074799 doi "https://doi.org/10.7567/jjap.56.08mc09" @default.
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