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• W2738587637 abstract "Abstract Recent breakthroughs in Cu(In,Ga)Se 2 (CIGS) thin film solar cell energy conversion efficiency are related to the application of a potassium fluoride post‐deposition treatment (KF‐PDT) to the completed absorber. Using X‐ray photoelectron spectroscopy and Raman scattering, we compare CIGS layers prior and after the KF‐PDT in the case of a deterioration and an improvement of the solar cells photovoltaic performance. The purpose is to study and model the modification of the surface in both cases and address some of the required characteristics of the absorber, grown on soda lime glass by 3‐stage process, in order to take advantage of the treatment. We show that, in both cases, KF‐PDT induces the formation of GaF 3 , which is removed during the subsequent chemical bath deposition of CdS, explaining the Ga depleted absorber surface, already reported in literature. However, the presence or not of an ordered defect compound (ODC), correlated with the third stage duration during the CIGS growth, is shown to be crucial in the modifications of the surface induced by the treatment. When an ODC is present prior the treatment, KF‐PDT leads to the formation of a surface layer of In 2 Se 3 containing K, and the photovoltaic performance of completed solar cells are improved. When no ODC is present prior KF‐PDT, no trace of K is found at the absorber surface after the treatment, copper (Cu) segregates into detrimental Cu x Se phases, high amount of elemental Se is formed, and the photovoltaic performance are lowered. The role of the ODC during the KF‐PDT is finally discussed." @default.
• W2738587637 created "2017-07-31" @default.
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• W2738587637 date "2017-07-26" @default.
• W2738587637 modified "2023-10-01" @default.
• W2738587637 title "KF post deposition treatment in co-evaporated Cu(In,Ga)Se₂ thin film solar cells: Beneficial or detrimental effect induced by the absorber characteristics" @default.
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• W2738587637 doi "https://doi.org/10.1002/pip.2924" @default.
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