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- W2738762760 abstract "Abstract The performance of normally-off Gallium-Nitride (GaN) High-Electron-Mobility-Transistors (HEMTs) under extended short circuit operation is investigated. A thermal limit is found in the aluminium metallization, where at temperatures around 600 °C a protrusion of the gate metal through the Inter-Level Dielectric (ILD) may form, short-circuiting gate and source metallization and thus resulting in a permanently-off failure state. The present work shows how this particular failure mode can be induced by extreme overload operation, and presents a Finite Element (FE) model which agrees with the experimental observations and gives insights in the mechanical stress-state developing in the device. The deeper thermo-mechanical understanding of the degradation mechanism suggests directions in order to improve the device's robustness." @default.
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- W2738762760 date "2017-09-01" @default.
- W2738762760 modified "2023-09-24" @default.
- W2738762760 title "Exploring the thermal limit of GaN power devices under extreme overload conditions" @default.
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- W2738762760 doi "https://doi.org/10.1016/j.microrel.2017.07.046" @default.
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