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• W273879102 abstract "In this study, we performed growth of InGaN/GaN multi quantum well (MQW) structures on semi-polar (1-10]) GaN facet on 8-degree off oriented stripe patterned (100) Si substratcs by MOVPE. The structural and optical properties of the InGaN/GaN multi quantum well (MQW) structures grown on (1-101) GaN stripe depend on flow rate, TMI flow rate and growth temperature are characterized by cathodoluminescence (CL) and scanning electron microscopy (SEM). With the decrease of flow rate, the threading dislocation of (1-101) GaN is considerably reduced. We could control the transition wavelength of InGaN/GaN MQW structures from 391.5 nm to 541.2 nm depend on the growth conditions." @default.
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• W273879102 date "2009-01-01" @default.
• W273879102 modified "2023-09-27" @default.
• W273879102 title "Growth of semi-polar (1-101) InGaN/GaN MQW structures on $8^{circ}$ off -axis (100) patterned Si substrate by MOVPE" @default.
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