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• W2740312105 abstract "Low contact resistance between metal-graphene contacts remains a well-known challenge for building high-performance two dimensional materials devices. In this study, CVD-grown graphene film was doped via AuCl3 solution selectively only to metal (Ti/Au) contact area to reduce the contact resistances without compromising the channel properties of graphene. With 10 mM-AuCl3 doping, doped graphene exhibited low contact resistivity of ∼897 Ω μm, which is lower than that (∼1774 Ω μm) of the raw graphene devices. The stability of the contact resistivity in atmospheric environment was evaluated. The contact resistivity increased by 13% after 60 days in an air environment, while the sheet resistance of doped graphene increased by 50% after 30 days. The improved stability of the contact resistivity of AuCl3-doped graphene could be attributed to the fact that the surface of doped-graphene is covered by Ti/Au electrode and the metal prevents the diffusion of AuCl3." @default.
• W2740312105 created "2017-08-08" @default.
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• W2740312105 date "2018-01-01" @default.
• W2740312105 modified "2023-10-15" @default.
• W2740312105 title "Selective AuCl3 doping of graphene for reducing contact resistance of graphene devices" @default.
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• W2740312105 doi "https://doi.org/10.1016/j.apsusc.2017.07.301" @default.
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