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• W2740477629 abstract "The scaling of silicon-based MOSFET technology beyond the 22 nm node is challenging. Further progress requires new materials, innovative structures, and even novel device concepts. All the emergent channel materials need perfect top-gate dielectric stacks in order to sustain their potential device performance. ALD high-k as a common gate stack solution finds itself very successfully integrated with these novel channel materials such as Ge, III-V, different nanowires, carbon nanotubes (CNTs), graphene and newly discovered all oxide electronic materials." @default.
• W2740477629 created "2017-08-08" @default.
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• W2740477629 date "2010-01-01" @default.
• W2740477629 modified "2023-09-22" @default.
• W2740477629 title "ALD High-k as a Common Gate Stack Solution for Nano-electronics" @default.
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