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• W2740593263 abstract "High-k gate dielectrics are used to suppress exces sive transistor gate leakage and power consumption could speed up the introducti on of metal gates in complementary metal oxide semiconductor (CMOS) transistors. Many new oxides are being evaluated as gate dielectrics, such as Al 2O3, Y 2O3, La 2O3, Gd 2O3, HfO 2, ZrO 2, and TiO 2, BaZrO 3, ZrSiO 4 and HfSiO 4. Ru, RuO 2 and SrRuO 3 gate electrodes grown on thermal SiO 2. Research metal oxide materials with high k values (ZrO 2, HfO 2, Al 2O3, Y 2O3, La 2O3, etc.) have reasonably large conduction band offset (estimated to be in the range of 1.5- 3.0 eV). Gate dielectric for CMOS scaling at the 0. 18 µm and below becomes the leading front-end integration issue. Gate oxide thickness m ust be scaled down when the gate length is shrunk down to deep sub-micron region. T he direct tunneling through the gate dielectric and gate oxide reliability are the two m ajor concerns for ultra thin gate dielectric films. The scaling of gate dielectric thickness represents a major issue in the development of metal oxide semiconductor field effe ct transistors (MOSFET) ." @default.
• W2740593263 created "2017-08-08" @default.
• W2740593263 creator A5002123665 @default.
• W2740593263 creator A5024470450 @default.
• W2740593263 date "2011-01-01" @default.
• W2740593263 modified "2023-09-26" @default.
• W2740593263 title "High-k Gate Dielectrics of Thin Films with its Technological Applications -A Review" @default.
• W2740593263 cites W1496024054 @default.
• W2740593263 cites W1848440189 @default.
• W2740593263 cites W1979016485 @default.
• W2740593263 cites W1990508636 @default.
• W2740593263 cites W1991527480 @default.
• W2740593263 cites W1991797460 @default.
• W2740593263 cites W2001997044 @default.
• W2740593263 cites W2003645630 @default.
• W2740593263 cites W2006734632 @default.
• W2740593263 cites W2018357689 @default.
• W2740593263 cites W2024677324 @default.
• W2740593263 cites W2038330453 @default.
• W2740593263 cites W2050276976 @default.
• W2740593263 cites W2053238039 @default.
• W2740593263 cites W2057849725 @default.
• W2740593263 cites W2061844299 @default.
• W2740593263 cites W2076195862 @default.
• W2740593263 cites W2076853514 @default.
• W2740593263 cites W2077122489 @default.
• W2740593263 cites W2120968334 @default.
• W2740593263 cites W2121249010 @default.
• W2740593263 cites W2125040587 @default.
• W2740593263 cites W2136019708 @default.
• W2740593263 cites W2145633302 @default.
• W2740593263 cites W2148033451 @default.
• W2740593263 cites W2532123035 @default.
• W2740593263 cites W2532192599 @default.
• W2740593263 cites W2539924627 @default.
• W2740593263 cites W2541473464 @default.
• W2740593263 cites W2541575124 @default.
• W2740593263 cites W2544457179 @default.
• W2740593263 cites W2545155277 @default.
• W2740593263 cites W2545322706 @default.
• W2740593263 cites W3140586871 @default.
• W2740593263 cites W589995197 @default.
• W2740593263 cites W165374763 @default.
• W2740593263 hasPublicationYear "2011" @default.
• W2740593263 type Work @default.
• W2740593263 sameAs 2740593263 @default.
• W2740593263 citedByCount "4" @default.
• W2740593263 countsByYear W27405932632015 @default.
• W2740593263 countsByYear W27405932632016 @default.
• W2740593263 countsByYear W27405932632018 @default.
• W2740593263 crossrefType "journal-article" @default.
• W2740593263 hasAuthorship W2740593263A5002123665 @default.
• W2740593263 hasAuthorship W2740593263A5024470450 @default.
• W2740593263 hasConcept C119599485 @default.
• W2740593263 hasConcept C127413603 @default.
• W2740593263 hasConcept C133386390 @default.
• W2740593263 hasConcept C152909973 @default.
• W2740593263 hasConcept C16317505 @default.
• W2740593263 hasConcept C165801399 @default.
• W2740593263 hasConcept C166972891 @default.
• W2740593263 hasConcept C172385210 @default.
• W2740593263 hasConcept C192562407 @default.
• W2740593263 hasConcept C2361726 @default.
• W2740593263 hasConcept C2778413303 @default.
• W2740593263 hasConcept C46362747 @default.
• W2740593263 hasConcept C49040817 @default.
• W2740593263 hasConcept C51140833 @default.
• W2740593263 hasConcept C52780932 @default.
• W2740593263 hasConceptScore W2740593263C119599485 @default.
• W2740593263 hasConceptScore W2740593263C127413603 @default.
• W2740593263 hasConceptScore W2740593263C133386390 @default.
• W2740593263 hasConceptScore W2740593263C152909973 @default.
• W2740593263 hasConceptScore W2740593263C16317505 @default.
• W2740593263 hasConceptScore W2740593263C165801399 @default.
• W2740593263 hasConceptScore W2740593263C166972891 @default.
• W2740593263 hasConceptScore W2740593263C172385210 @default.
• W2740593263 hasConceptScore W2740593263C192562407 @default.
• W2740593263 hasConceptScore W2740593263C2361726 @default.
• W2740593263 hasConceptScore W2740593263C2778413303 @default.
• W2740593263 hasConceptScore W2740593263C46362747 @default.
• W2740593263 hasConceptScore W2740593263C49040817 @default.
• W2740593263 hasConceptScore W2740593263C51140833 @default.
• W2740593263 hasConceptScore W2740593263C52780932 @default.
• W2740593263 hasLocation W27405932631 @default.
• W2740593263 hasOpenAccess W2740593263 @default.
• W2740593263 hasPrimaryLocation W27405932631 @default.
• W2740593263 hasRelatedWork W134971299 @default.
• W2740593263 hasRelatedWork W1546044645 @default.
• W2740593263 hasRelatedWork W1667366672 @default.
• W2740593263 hasRelatedWork W1789998768 @default.
• W2740593263 hasRelatedWork W1987548116 @default.
• W2740593263 hasRelatedWork W2058949830 @default.
• W2740593263 hasRelatedWork W2090034743 @default.
• W2740593263 hasRelatedWork W2142705747 @default.
• W2740593263 hasRelatedWork W2150571725 @default.
• W2740593263 hasRelatedWork W2163650518 @default.
• W2740593263 hasRelatedWork W2512999431 @default.
• W2740593263 hasRelatedWork W2532866824 @default.
• W2740593263 hasRelatedWork W2540425465 @default.
• W2740593263 hasRelatedWork W2544417581 @default.

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