Matches in SemOpenAlex for { <https://semopenalex.org/work/W2740747508> ?p ?o ?g. }
Showing items 1 to 93 of
93
with 100 items per page.
- W2740747508 endingPage "316" @default.
- W2740747508 startingPage "312" @default.
- W2740747508 abstract "Abstract Degradation characteristics and mechanisms of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated under swift heavy-ion irradiation. AlGaN/GaN HEMTs were exposed to 800 MeV Bi ions with fluence up to 5.28 × 10 10 ions/cm 2 . Post-irradiation measurement shows that the saturation drain current reduced by 15%, the maximum transconductance decreased by more than 27%, and both the positive and negative gate characteristics degraded dramatically. By the off-state examination using the Photo Emission Microscopy (PEM), electroluminescence hot spots were found in the gate areas, which indicates new leakage passages produced by heavy-ion bombardment. Micro cross sections were prepared at hot spot areas by dual-beam focused ion beam (FIB) and examined using transmission electron microscope (TEM). The presence of latent tracks throughout the whole hetero-junction area was confirmed. Latent tracks, which related to the high density ionizing energy-loss, play a role of new leakage paths and account for the increment of gate leakage. Moreover, nonionizing energy-loss induced defects decrease the charge density in the two-dimensional electron gas (2DEG) and reduce the carrier mobility, leading to the degradation of device output performances." @default.
- W2740747508 created "2017-08-08" @default.
- W2740747508 creator A5000237593 @default.
- W2740747508 creator A5008558592 @default.
- W2740747508 creator A5020733982 @default.
- W2740747508 creator A5031160369 @default.
- W2740747508 creator A5032056739 @default.
- W2740747508 creator A5042969818 @default.
- W2740747508 creator A5044444234 @default.
- W2740747508 creator A5054832682 @default.
- W2740747508 creator A5055290385 @default.
- W2740747508 creator A5070955977 @default.
- W2740747508 date "2018-01-01" @default.
- W2740747508 modified "2023-09-26" @default.
- W2740747508 title "Degradation mechanisms of AlGaN/GaN HEMTs under 800 MeV Bi ions irradiation" @default.
- W2740747508 cites W1922924821 @default.
- W2740747508 cites W1968428185 @default.
- W2740747508 cites W1972467219 @default.
- W2740747508 cites W1984351419 @default.
- W2740747508 cites W1991644409 @default.
- W2740747508 cites W2012512912 @default.
- W2740747508 cites W2019716204 @default.
- W2740747508 cites W2025334554 @default.
- W2740747508 cites W2048772886 @default.
- W2740747508 cites W2073354463 @default.
- W2740747508 cites W2159551223 @default.
- W2740747508 cites W2160833768 @default.
- W2740747508 cites W2259768559 @default.
- W2740747508 cites W3005198624 @default.
- W2740747508 doi "https://doi.org/10.1016/j.microrel.2017.07.086" @default.
- W2740747508 hasPublicationYear "2018" @default.
- W2740747508 type Work @default.
- W2740747508 sameAs 2740747508 @default.
- W2740747508 citedByCount "17" @default.
- W2740747508 countsByYear W27407475082018 @default.
- W2740747508 countsByYear W27407475082019 @default.
- W2740747508 countsByYear W27407475082020 @default.
- W2740747508 countsByYear W27407475082021 @default.
- W2740747508 countsByYear W27407475082022 @default.
- W2740747508 countsByYear W27407475082023 @default.
- W2740747508 crossrefType "journal-article" @default.
- W2740747508 hasAuthorship W2740747508A5000237593 @default.
- W2740747508 hasAuthorship W2740747508A5008558592 @default.
- W2740747508 hasAuthorship W2740747508A5020733982 @default.
- W2740747508 hasAuthorship W2740747508A5031160369 @default.
- W2740747508 hasAuthorship W2740747508A5032056739 @default.
- W2740747508 hasAuthorship W2740747508A5042969818 @default.
- W2740747508 hasAuthorship W2740747508A5044444234 @default.
- W2740747508 hasAuthorship W2740747508A5054832682 @default.
- W2740747508 hasAuthorship W2740747508A5055290385 @default.
- W2740747508 hasAuthorship W2740747508A5070955977 @default.
- W2740747508 hasConcept C111337013 @default.
- W2740747508 hasConcept C119599485 @default.
- W2740747508 hasConcept C121332964 @default.
- W2740747508 hasConcept C127413603 @default.
- W2740747508 hasConcept C145148216 @default.
- W2740747508 hasConcept C178790620 @default.
- W2740747508 hasConcept C185544564 @default.
- W2740747508 hasConcept C185592680 @default.
- W2740747508 hasConcept C192562407 @default.
- W2740747508 hasConcept C2779679103 @default.
- W2740747508 hasConcept C49040817 @default.
- W2740747508 hasConceptScore W2740747508C111337013 @default.
- W2740747508 hasConceptScore W2740747508C119599485 @default.
- W2740747508 hasConceptScore W2740747508C121332964 @default.
- W2740747508 hasConceptScore W2740747508C127413603 @default.
- W2740747508 hasConceptScore W2740747508C145148216 @default.
- W2740747508 hasConceptScore W2740747508C178790620 @default.
- W2740747508 hasConceptScore W2740747508C185544564 @default.
- W2740747508 hasConceptScore W2740747508C185592680 @default.
- W2740747508 hasConceptScore W2740747508C192562407 @default.
- W2740747508 hasConceptScore W2740747508C2779679103 @default.
- W2740747508 hasConceptScore W2740747508C49040817 @default.
- W2740747508 hasLocation W27407475081 @default.
- W2740747508 hasOpenAccess W2740747508 @default.
- W2740747508 hasPrimaryLocation W27407475081 @default.
- W2740747508 hasRelatedWork W2018850730 @default.
- W2740747508 hasRelatedWork W2058676402 @default.
- W2740747508 hasRelatedWork W2094481310 @default.
- W2740747508 hasRelatedWork W2370528915 @default.
- W2740747508 hasRelatedWork W2399397734 @default.
- W2740747508 hasRelatedWork W2902546961 @default.
- W2740747508 hasRelatedWork W2964979483 @default.
- W2740747508 hasRelatedWork W3207561606 @default.
- W2740747508 hasRelatedWork W4306931971 @default.
- W2740747508 hasRelatedWork W2999712788 @default.
- W2740747508 hasVolume "80" @default.
- W2740747508 isParatext "false" @default.
- W2740747508 isRetracted "false" @default.
- W2740747508 magId "2740747508" @default.
- W2740747508 workType "article" @default.