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- W2741791623 abstract "Thermochromic GexV1−xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (∼95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution." @default.
- W2741791623 created "2017-08-08" @default.
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- W2741791623 date "2017-07-28" @default.
- W2741791623 modified "2023-10-16" @default.
- W2741791623 title "Elevated transition temperature in Ge doped VO<sub>2</sub> thin films" @default.
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- W2741791623 doi "https://doi.org/10.1063/1.4995965" @default.
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