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- W2742343499 abstract "The current field-effect transistors use nickel-based silicides for contacting the source and drain regions. The thickness of this silicide is trending to ever-thinner values. The influence of this thickness decrease on the formation of nickel silicides was systematically investigated between 0 and 15 nm. Annealing thickness gradients enabled us to distinguish two regimes: films above a critical thickness tend to agglomerate at high temperature, while ultra-thin films below a critical thickness are morphologically extremely stable. The critical thickness for pure Ni films is about 5nm. Through alloying of the initial Ni layer, we could influence this critical thickness to higher (Al, Co) and lower (Ge, Pd, Pt) values. Synchrotron based pole figure measurements provided texture information that helps to understand the observed shift in critical thickness and the morphological stability of the ultra-thin silicide layers." @default.
- W2742343499 created "2017-08-17" @default.
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- W2742343499 date "2016-10-01" @default.
- W2742343499 modified "2023-09-27" @default.
- W2742343499 title "Formation of ultrathin, stable and epitaxial silicides for semiconductor contacts" @default.
- W2742343499 doi "https://doi.org/10.1109/icsict.2016.7998963" @default.
- W2742343499 hasPublicationYear "2016" @default.
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