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- W2742428254 abstract "Degradation of n-type low temperature poly-Si (LTPS) TFTs is investigated under bipolar gate pulses with a small drain bias. It is found that degradation behaviors are similar to those caused by the bipolar gate pulses with source and drain grounded. Dynamic hot carrier (HC) degradation is the dominant mechanism. However, device degradation also strongly depends on the drain bias. Four-terminal poly-Si TFTs, which have an additional body terminal, degrade much less than conventional TFTs under the same stress condition. The degradation behaviors can be explained based on the non-equilibrium PN junction degradation model." @default.
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- W2742428254 date "2016-10-01" @default.
- W2742428254 modified "2023-10-04" @default.
- W2742428254 title "Degradation of low temperature poly-Si TFTs under bipolar gate pulses with DC drain bias" @default.
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- W2742428254 doi "https://doi.org/10.1109/icsict.2016.7999000" @default.
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