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- W2743031980 abstract "Abstract Fast growth of n-type 4H-SiC crystals was attempted using a high-temperature gas-source method. High growth rates exceeding 9 mm/h were archived at a seed temperature of 2550 °C, although the formation of macro-step bunching caused doping fluctuation and voids in the grown crystal. We investigated a trade-off between growth-rate enhancement and macro-step formation and how to improve the trade-off. By controlling the growth conditions, the growth of highly nitrogen-doped 4H-SiC crystals without the doping fluctuation and void formation were accomplished under a high growth rate exceeding 3 mm/h, maintaining the density of threading screw dislocations in the same level with the seed crystal. The influence of growth parameters on nitrogen incorporations into grown crystals was also surveyed." @default.
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- W2743031980 date "2017-11-01" @default.
- W2743031980 modified "2023-09-25" @default.
- W2743031980 title "Fast growth of n-type 4H-SiC bulk crystal by gas-source method" @default.
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- W2743031980 doi "https://doi.org/10.1016/j.jcrysgro.2017.08.004" @default.
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