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- W274319873 abstract "The resistance switching characteristics of amorphous and poly-crystalline were investigated. Both films exhibit well defined switching characteristics with low and high resistance states. From I-V curve analyses, it was found that the low resistance states of both films obey an ohmic conduction mechanism and the high resistance states show generation of a Schottky potential barrier. Regarding the mechanism for resistance switching of the binary oxide, it is suggested that the generation and annihilation of potential barriers accounts for the changes to the high resistance state and low resistance state, respectively. The device operation characteristic parameters such as reset and set voltages of are distinctly smaller than those of , indicating that the values are related to the dielectric constant." @default.
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- W274319873 date "2006-01-01" @default.
- W274319873 modified "2023-09-27" @default.
- W274319873 title "Resistance Switching Characteristics of Binary $SiO_2;and;TiO_2$ Films" @default.
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