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• W2744610281 abstract "The effects of the external electric field on the height of the Schottky barrier at the Gd3N@C80/Au interface were studied by measuring current-voltage characteristics at various temperatures from 200 K to 450 K. The Gd3N@C80 sample with the conduction/forbidden/valence energy band structure had a face-centered cubic crystal structure with the average grain size of several nanometers. The height of the Gd3N@C80/Au Schottky barrier was confirmed to be 400 meV at a low electric field at room temperature. Moreover, the height decreases with the increasing external electric field through a change of permittivity in the Gd3N@C80 sample due to a polarization of the [Gd3]9+−[N3−+C806−] dipoles in the Gd3N@C80 molecule. The field-dependence of the barrier height can be described using a power math function of the electric field strength. The results of the field-dependent barrier height indicate that the reduction in the Schottky barrier is due to an image force effect of the transport charge carrier at the Gd3N@C80/Au interface." @default.
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• W2744610281 date "2017-08-08" @default.
• W2744610281 modified "2023-10-11" @default.
• W2744610281 title "External electric field effects on Schottky barrier at Gd₃N@C₈₀/Au interface" @default.
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• W2744610281 doi "https://doi.org/10.1063/1.4986878" @default.
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