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• W2747675786 abstract "This letter realizes both large gate dielectric capacitance and reduced sub-gap density of states at the channel in the same organic field effect transistor (OFET) structure by adopting optimized low-k/high-k bilayer gate dielectric. Subthreshold swing (SS) as small as 64 mV dec <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> can be achieved with a thick (>360 nm) gate dielectric layer. This is the smallest SS value reported so far for all reported low voltage OFETs, and is even comparable with that of 22 nm technology node Si-FETs. The device can thus be switched within a very small voltage swing of 0.8 V, while having an ON/OFF ratio larger than 105. The device also shows excellent operational and storage stabilities." @default.
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• W2747675786 date "2017-10-01" @default.
• W2747675786 modified "2023-10-05" @default.
• W2747675786 title "Fully Solution Processed Bottom-Gate Organic Field-Effect Transistor With Steep Subthreshold Swing Approaching the Theoretical Limit" @default.
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• W2747675786 doi "https://doi.org/10.1109/led.2017.2742952" @default.
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