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• W2747971775 abstract "A method is presented for the determination of the carrier drift mobility, lifetime, electric field distribution, and the dynamics of space charge formation, including the detrapping energy and capture cross-section of the dominant trap level in polarizing semiconductor radiation detectors. The procedure stems from the laser-induced transient current measurements done at a steady-state and pulsed biasing and at variable temperature. The approach allows us the direct determination of detector parameters from measured data without a complex mathematical treatment. The detrimental effect of surface carrier recombination often hampering the evaluation of detector properties is eliminated. Lifetime worsening caused by the space charge formation is included. The usefulness of the procedure is demonstrated on a CdTe radiation detector." @default.
• W2747971775 created "2017-08-31" @default.
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• W2747971775 date "2017-08-21" @default.
• W2747971775 modified "2023-10-04" @default.
• W2747971775 title "Characterization of polarizing semiconductor radiation detectors by laser-induced transient currents" @default.
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• W2747971775 doi "https://doi.org/10.1063/1.4997404" @default.
• W2747971775 hasPublicationYear "2017" @default.
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