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• W2749344670 abstract "Since their conception two centuries ago, semiconductors have rapidly becomeone of the most active fields of research. As their exceptional potentialbecame recognised, increasing amounts of resources were invested inthe research and production of these materials. Consequently, semiconductorindustry has gradually grown to become an essential lifeline of worldeconomics. In the early 1980, the demand for electronic device miniaturisation,high integration and high computing speed led to the emergence ofmesoscopic physics. Meanwhile, advances in materials science and microprocessingtechnology enabled experimental study in this area. By constantlyreducing the scale of semiconductor devices, manufacturers could integratesmaller electronic devices onto one chip.These so-called integrated circuitsperform storage, computing and other functions. In current production linesof the semiconductor industry, nanoscale electronic components have becomethe conventional technology.This thesis investigates transport properties of two-dimensional electronsusing the phenomenon of magnetoresistance in perpendicular magnetic fieldsat low temperature. Dimensionality transitions are enabled by quantumpoint contact.Chapter 1 and 2 introduce the background information and low dimensionaltransport related theories, respectively. Chapter 3 describes the samplefabrication technique, instruments used in our experiments and the experimentalset-up. Low-temperature measurements of the split-gate GaAs/AlGaAs heterostructureare fully described in Chapter 4. The phase-coherence informationis extracted by investigating the weak localisation effect at various temperature.The temperature dependence of phase coherence experimentally reflectsthe underlying transport properties.Chapter 5 investigates and discusses the universal conductance fluctuation.TheInGaAs/InAlAs heterostructure using which we interpret the lowtemperaturetransport phenomena, is experimentally investigated in Chapter6." @default.
• W2749344670 created "2017-08-31" @default.
• W2749344670 creator A5008523475 @default.
• W2749344670 date "2016-09-28" @default.
• W2749344670 modified "2023-09-23" @default.
• W2749344670 title "Dimensionality transitions in group III-V semiconductors" @default.
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