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- W2749646507 abstract "This paper studies the Hall mobility of Hall structures integrated in two CMOS technological processes, regular bulk and Silicon on Insulator respectively. The main character of this study is the Basic Hall cell, for which accurate dimensions (length and width of the active region, electrical contacts size and area of the p-substrate) are given. To this purpose, three-dimensional physical models are considered for the Basic Hall structure in both processes, and the Hall mobility is evaluated. All the necessary doping profiles are provided. Regarding the absolute sensitivity of the Hall cells, both experimental and simulated data is provided for the bulk Basic cell, while simulation results are included for the SOI Basic Hall cell. A theoretical computation approach and specific equations are presented for the Hall mobility evaluation. A discussion of the Hall mobility is made in both technological processes, by providing numerical evaluation through physical simulations to the behavior of this important parameter. For both regular bulk and SOI Basic Hall cell, the maximum values as well as the plateau region are identified for the Hall mobility." @default.
- W2749646507 created "2017-08-31" @default.
- W2749646507 creator A5034372215 @default.
- W2749646507 date "2017-07-01" @default.
- W2749646507 modified "2023-10-18" @default.
- W2749646507 title "Hall mobility study of hall structures in two different CMOS technological processes" @default.
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- W2749646507 doi "https://doi.org/10.1109/eurocon.2017.8011111" @default.
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