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• W2753007841 abstract "This study presents monolithically integrated power circuits, fabricated in a high-voltage GaN-on-Si heterojunction technology. Different advanced concepts are presented and compared with solutions found in the literature. High switching transition slew rates are demonstrated by means of a monolithic power circuit with integrated gate driver. A highly linear temperature sensor is integrated in a GaN-high-electron-mobility transistor (HEMT) power device for the 600 V class and on-state resistance of 53 mΩ. An area-efficient HEMT structure with integrated freewheeling diodes is presented. This structure is applied in a monolithic multilevel converter chip, as well as in a 600 V class half-bridge chip. The multilevel chip is integrated by an advanced printed circuit board embedding technology and tested in inverter operation with a mains voltage output of 120 VRMS. The performance of the half-bridge is demonstrated in a synchronous buck converter operation from 400 to 200 V and with a switching frequency of 3 MHz." @default.
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• W2753007841 date "2018-04-01" @default.
• W2753007841 modified "2023-10-06" @default.
• W2753007841 title "Monolithically integrated power circuits in high‐voltage GaN‐on‐Si heterojunction technology" @default.
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• W2753007841 doi "https://doi.org/10.1049/iet-pel.2017.0397" @default.
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