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- W2753136792 abstract "Point defects, which scatter electronic carriers as well as phonons, play a vital role in the transport properties of thermoelectric materials. Therefore, defect engineering can be utilized for tuning thermoelectric properties. Mg vacancies, as the dominant defects in the n-type Mg3Sb2-based materials, can greatly impact the transport properties of this compound. Here we demonstrate that the Mg vacancies in the n-type Mg3Sb2-based materials can be successfully manipulated by simply tuning the preparation conditions. A substantial enhancement in the Hall mobility is obtained, from ∼39 to ∼128 cm2 V–1 s–2, an increase of ∼228%. The significantly improved Hall mobility noticeably boosts the power factor from ∼6 to ∼20 μW cm–1 K–2 and effectively enhances the thermoelectric figure of merit. Our results demonstrate that defect engineering could be very effective in improving the thermoelectric performance of n-type Mg3Sb2-based materials." @default.
- W2753136792 created "2017-09-15" @default.
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- W2753136792 date "2017-09-07" @default.
- W2753136792 modified "2023-10-16" @default.
- W2753136792 title "Defect Engineering for Realizing High Thermoelectric Performance in n-Type Mg<sub>3</sub>Sb<sub>2</sub>-Based Materials" @default.
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- W2753136792 doi "https://doi.org/10.1021/acsenergylett.7b00742" @default.
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