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- W2753242578 abstract "In this paper, we have investigated Ni-based AlGaN/GaN Schottky diodes comprising capping layers with silicon-technology-compatible metals such as TiN, TiW, TiWN, and combinations thereof. The observed change in Schottky barrier height of a Ni and Ni/TiW/TiWN/TiW contact can be explained by stress effects induced by the TiW/TiWN/TiW capping layer, rather than by chemical reactions at the metal–semiconductor interface. Secondary-ion mass spectroscopy and transmission electron microscopy techniques, for samples with and without a TiW/TiWN/TiW cap, have been used to show that no chemical reactions take place. In addition, electrical characterization of dedicated samples revealed that the barrier height of Ni/TiW/TiWN/TiW contacts increases after stepwise selective removal of the TiW/TiWN/TiW cap, thus demonstrating the impact of strain." @default.
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- W2753242578 date "2017-10-01" @default.
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- W2753242578 title "Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes" @default.
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- W2753242578 doi "https://doi.org/10.1109/ted.2017.2742991" @default.
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