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• W2754313487 startingPage "34064" @default.
• W2754313487 abstract "Redox-based memristor devices, which are considered to have promising nonvolatile memory, mainly operate through the formation/rupture of nanoscale conductive filaments. However, the random growth of conductive filaments is an obstacle for the stability of memory devices and the cell-to-cell uniformity. Here, we investigate the guiding effect of nanoindentation on the growth of conductive filaments in resistive memory devices. The nanoindented top electrodes generate an electric field concentration and the resultant precise control of a conductive filament in two typical memory devices, Ag/SiO2/Pt and W/Ta2O5/Pt. The nanoindented cells possess a much larger ON/OFF ratio, a sharper RESET process, a higher response speed, and better cell-to-cell uniformity compared with the conventional cells. Our finding reflects that the use of large-scale nanotransfer printing might be a unique way to improve the performance of resistive random access memory." @default.
• W2754313487 created "2017-09-25" @default.
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• W2754313487 date "2017-09-21" @default.
• W2754313487 modified "2023-10-16" @default.
• W2754313487 title "Guiding the Growth of a Conductive Filament by Nanoindentation To Improve Resistive Switching" @default.
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• W2754313487 doi "https://doi.org/10.1021/acsami.7b09710" @default.
• W2754313487 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/28901743" @default.
• W2754313487 hasPublicationYear "2017" @default.
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