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- W2755246185 abstract "The ruthenium (Ru) doped CdO thin films were deposited by spray pyrolysis method on glass substrate, with various Ru concentrations (0.1, 0.125, 0.150, 0.175 and 0.2 wt%). The effect of Ru doping concentration on the electrical, optical, structural, microstructural and gas sensing properties was studied by Hall measurement, UV–vis–NIR spectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, micro-Raman and chemi-resistivity method. The results obtained show that the carrier mobility, visible-NIR transparency, surface morphology and gas response are effectively tuned by varying Ru doping concentration. The 0.1 wt% Ru doped CdO thin film shows relatively high optical band gap (2.32 eV) and maximum transmittance (70%) in the range between 600 and 900 nm. The high electrical properties (mobility 110 cm2/V⋅s and carrier concentration 1.77 × 1020 cm−3) are obtained for 0.150 wt% Ru doped CdO thin film. The high formaldehyde gas sensitivity (35%), fast response and recovery time are observed for 0.150 wt% Ru doped CdO thin film." @default.
- W2755246185 created "2017-09-25" @default.
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- W2755246185 date "2018-01-01" @default.
- W2755246185 modified "2023-10-14" @default.
- W2755246185 title "Spray deposited ruthenium incorporated CdO thin films for opto-electronic and gas sensing applications" @default.
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- W2755246185 doi "https://doi.org/10.1016/j.jpcs.2017.09.019" @default.
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