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• W2755338716 abstract "AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface." @default.
• W2755338716 created "2017-09-25" @default.
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• W2755338716 date "2017-09-01" @default.
• W2755338716 modified "2023-09-30" @default.
• W2755338716 title "Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au" @default.
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• W2755338716 doi "https://doi.org/10.1063/1.4996172" @default.
• W2755338716 hasPublicationYear "2017" @default.
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