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- W2755899556 abstract "Organic nonvolatile memories can be key components toward future low-cost, light-weight, flexible and portable electronic products. The memories based on organic field-effect transistors (OFETs) possess advantages of nondestructive reading, capability to integrate data processing and storage, and compatibility with various substrates. OFET nonvolatile memories face the challenge of simultaneously achieving large memory window, high air stability, long retention time and good rewritable endurance. We firstly elucidate the charge trapping/detrapping mechanism in the memories by a variety of approaches [1-9], including (1) in-situ surface potential mapping, (2) design and tailoring of nano-floating-gate, (3) characterization on memory ambient stability, (4) light response of memory behaviors and (5) probing of current transition point. The charge trapping/detrapping mechanism turns out to be a complex process dependent on both external electrical/optical fields and internal material properties. Secondly, the OFET nonvolatile memories are demonstrated to be promising in the applications of multibit data storage and solar-blind photodetection.References:[1] Wang, S.; Gao, X.; Zhong, Y. N.; Zhang, Z. D.; Xu, J. L.; Wang, S. D. Appl. Phys. Lett. 2016, 109, 023301.[2] Liu, J.; Wang, C. H.; Liu, C. H.; Li, Q. L.; Gao, X.; Wang, S. D. Adv. Electron. Mater. 2016, 2, 1500349.[3] Zhang, J. Y.; Liu, L. M.; Gao, X.; Liu, C. H.; Liu, J.; Dong, B.; Wang, S. D. Org. Electron. 2015. 25, 324-328.[4] Cui, Z. Q.; Wang, S.; Chen, J. M.; Gao, X.; Dong, B.; Chi, L. F.; Wang, S. D. Appl. Phys. Lett. 2015. 106, 123303.[5] Liu, J.; Liu, C. H.; She, X. J.; Sun, Q. J.; Gao, X.; Wang, S. D. Appl. Phys. Lett. 2014. 105, 163302.[6] Gao, X.; Liu, C. H.; She, X. J.; Li, Q. L.; Liu, J.; Wang, S. D. Org. Electron. 2014. 15, 2486-2491.[7] She, X. J.; Liu, J.; Zhang, J. Y.; Gao, X.; Wang, S. D. Appl. Phys. Lett. 2013. 103, 143302.[8] She, X. J.; Liu, C. H.; Zhang, J. Y.; Gao, X.; Wang, S. D. Appl. Phys. Lett. 2013. 102, 053303.[9] Gao, X.; She, X. J.; Liu, C. H.; Sun, Q. J.; Liu, J.; Wang, S. D. Appl. Phys. Lett. 2013. 102, 023303." @default.
- W2755899556 created "2017-09-25" @default.
- W2755899556 creator A5041312271 @default.
- W2755899556 creator A5071649894 @default.
- W2755899556 date "2017-09-19" @default.
- W2755899556 modified "2023-09-24" @default.
- W2755899556 title "Organic field-effect transistor nonvolatile memories: From fundamental understanding to prototype applications (Conference Presentation)" @default.
- W2755899556 doi "https://doi.org/10.1117/12.2275575" @default.
- W2755899556 hasPublicationYear "2017" @default.
- W2755899556 type Work @default.
- W2755899556 sameAs 2755899556 @default.
- W2755899556 citedByCount "0" @default.
- W2755899556 crossrefType "proceedings-article" @default.
- W2755899556 hasAuthorship W2755899556A5041312271 @default.
- W2755899556 hasAuthorship W2755899556A5071649894 @default.
- W2755899556 hasConcept C119599485 @default.
- W2755899556 hasConcept C121332964 @default.
- W2755899556 hasConcept C127413603 @default.
- W2755899556 hasConcept C145598152 @default.
- W2755899556 hasConcept C165801399 @default.
- W2755899556 hasConcept C171250308 @default.
- W2755899556 hasConcept C172385210 @default.
- W2755899556 hasConcept C177950962 @default.
- W2755899556 hasConcept C192562407 @default.
- W2755899556 hasConcept C49040817 @default.
- W2755899556 hasConcept C62520636 @default.
- W2755899556 hasConcept C99903730 @default.
- W2755899556 hasConceptScore W2755899556C119599485 @default.
- W2755899556 hasConceptScore W2755899556C121332964 @default.
- W2755899556 hasConceptScore W2755899556C127413603 @default.
- W2755899556 hasConceptScore W2755899556C145598152 @default.
- W2755899556 hasConceptScore W2755899556C165801399 @default.
- W2755899556 hasConceptScore W2755899556C171250308 @default.
- W2755899556 hasConceptScore W2755899556C172385210 @default.
- W2755899556 hasConceptScore W2755899556C177950962 @default.
- W2755899556 hasConceptScore W2755899556C192562407 @default.
- W2755899556 hasConceptScore W2755899556C49040817 @default.
- W2755899556 hasConceptScore W2755899556C62520636 @default.
- W2755899556 hasConceptScore W2755899556C99903730 @default.
- W2755899556 hasLocation W27558995561 @default.
- W2755899556 hasOpenAccess W2755899556 @default.
- W2755899556 hasPrimaryLocation W27558995561 @default.
- W2755899556 hasRelatedWork W1592880970 @default.
- W2755899556 hasRelatedWork W193322034 @default.
- W2755899556 hasRelatedWork W1973963229 @default.
- W2755899556 hasRelatedWork W2008858419 @default.
- W2755899556 hasRelatedWork W2013512719 @default.
- W2755899556 hasRelatedWork W2019188069 @default.
- W2755899556 hasRelatedWork W2042990609 @default.
- W2755899556 hasRelatedWork W204423145 @default.
- W2755899556 hasRelatedWork W2047170969 @default.
- W2755899556 hasRelatedWork W2063827409 @default.
- W2755899556 hasRelatedWork W2093865407 @default.
- W2755899556 hasRelatedWork W2114927923 @default.
- W2755899556 hasRelatedWork W2178939705 @default.
- W2755899556 hasRelatedWork W2733297101 @default.
- W2755899556 hasRelatedWork W2738442936 @default.
- W2755899556 hasRelatedWork W2754249997 @default.
- W2755899556 hasRelatedWork W2981374664 @default.
- W2755899556 hasRelatedWork W405522061 @default.
- W2755899556 hasRelatedWork W94056796 @default.
- W2755899556 hasRelatedWork W2522218600 @default.
- W2755899556 isParatext "false" @default.
- W2755899556 isRetracted "false" @default.
- W2755899556 magId "2755899556" @default.
- W2755899556 workType "article" @default.