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• W2756020383 abstract "Excitons, the bound states of an electron and a hole, in semiconductors are interestingobjects and they continue to attract attention of researchers from all over the world. Despite intense research on exciton physics over last three-fourdecades, many interesting phenomena related to the dynamics and the nonlinear opticalproperties of excitons in semiconductors and their nanostructures in the coherent andincoherent regimes are still to be explored. This thesis presents our effort to study thenonlinear optical properties as well as the exciton dynamics in coherent and incoherentregime in semiconductor nanostructures including GaAs quantum wells (QWs) and InAsquantum dots (QDs).We have set up several time-resolved and steady-state optical spectroscopic measurementtechniques in our laboratory to carry out our study on excitons dynamics insemiconductor QWs and QDs. We work out a clear and detailed theory of the pump-probe signal taking account of all aspect of the measurement, namely,the lock-in detection, spectral selection by the monochromator and time-integration atthe slow photodetector. We have used the formalism of optical Bloch equations conventionallyused to analyse wave mixing experiments. Our analysis puts the pump-probetechnique on the same footing as the wave mixing experiments. We show that pumpprobeexperiments can be used to study both coherent and incoherent dynamics. Wealso present a clear physical picture of the measured signal using the Lorentz harmonicoscillator model.We report the investigation of the coherent exciton dephasing dynamics using pumpprobereflectivity measurement in GaAs QWs for resonant excitation. Two GaAs/AlGaAsQWs with well thicknesses 8 nm and 17.5 nm are used. We found a strong dependence ofthe dephasing rate of the excitons with increasing exciton density due to exciton-excitonscattering. We found that the exciton dephasing rate of 8 nm QWs at low excitation densityand at low lattice temperature is larger than the corresponding dephasing rate of the17.5 nm QWs, possibly due to larger effect of inhomogeneous broadening. We also reportthat the dephasing rates for both QWs are linear with the sample temperature below the30 K.We report the study of ionization equilibrium between the exciton and the electronholeplasma population in the temperature and pressure (excitation density) phase space.Non-resonant excitation of semiconductor creates a nonequilibrium state of electron-holeplasma. We investigate this ionization equilibrium using steady state photoluminescenceand time-resolved excitation correlation PL measurements. We present aclear phase diagram (in temperature and carrier density phase space) of this ionization process.A clear density-dependent increase in the ionization ratio is observed and itsconnection with the Mott transition is discussed.Semiconductor nanocrystals and QDs are another important area of research, mainlydue to their huge potential for device application. We present a simplemodel which combines carrier loss kinetics, detailed balance principle in thermodynamicequilibrium and Pauli exclusion principle to quantitatively explain the observed behaviourof the experimental data." @default.
• W2756020383 created "2017-09-25" @default.
• W2756020383 creator A5021626811 @default.
• W2756020383 date "2015-09-01" @default.
• W2756020383 modified "2023-09-27" @default.
• W2756020383 title "Picosecond Dynamics in Optically ExcitedSemiconductors: Exciton Dephasing,Ionization Equilibrium and Pauli Blocking" @default.
• W2756020383 hasPublicationYear "2015" @default.
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