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• W2756504473 abstract "The role of photons in lithography is to transfer the energy and information required for resist pattern formation. In the information-deficit region, a trade-off relationship is observed between line edge roughness (LER) and sensitivity. However, the sensitivity can be increased without increasing LER in the energy-deficit region. In this study, the sensitivity enhancement limit was investigated, assuming line-and-space patterns with a half-pitch of 11 nm. LER was calculated by a Monte Carlo method. It was unrealistic to increase the sensitivity twofold while keeping the line width roughness (LWR) within 10% critical dimension (CD), whereas the twofold sensitivity enhancement with 20% CD LWR was feasible. The requirements are roughly that the sensitization distance should be less than 2 nm and that the total sensitizer concentration should be higher than 0.3 nm−3." @default.
• W2756504473 created "2017-10-06" @default.
• W2756504473 creator A5062989653 @default.
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• W2756504473 date "2017-09-27" @default.
• W2756504473 modified "2023-09-26" @default.
• W2756504473 title "Theoretical study on sensitivity enhancement in energy-deficit region of chemically amplified resists used for extreme ultraviolet lithography" @default.
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• W2756504473 doi "https://doi.org/10.7567/jjap.56.106503" @default.
• W2756504473 hasPublicationYear "2017" @default.
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